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EASE M.2 NVMe PCIe SSD 256GB

EASE

  • EASE NVME 256 GB High Speed Gen 3
  • Max Sequential Read 2131 Mb/s
  • Max Sequential Write 1244 Mb/s
  • TBW (Total Bytes Written) 110 TB
  • MTBF (Drive Writes Per Day) 1,500,000 Hours

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EASE M.2 NVMe PCIe SSD 256GB
Crystal Disk Mark
The attached graphical results from CrystalDiskMark showcase the exceptional performance of the EASE M.2 NVMe PCIe 256 GB SSD, highlighting its impressive sequential and random read/write speeds. This visual data confirms the drive’s reliability and speed, making it an excellent choice for high-performance computing tasks.
EASE M2 NVMe PCIe SSD 256GB Desc Img 1
AS SSD Benchmark
The attached graphical data from the AS SSD Benchmark highlights the exceptional performance of the EASE M.2 NVMe PCIe 256 GB SSD, showcasing its strong sequential and 4K random read/write speeds. The visuals also confirm low access times, reflecting the drive’s efficiency and responsiveness.
EASE M2 NVMe PCIe SSD 256GB Desc Img 2
EASE M2 NVMe PCIe SSD 256GB Desc Img 3
HD Tune Pro
The attached HD Tune Pro graphical results display the EASE M.2 NVMe PCIe 256 GB SSD’s consistent read/write performance and low access times, emphasizing its reliability and stability under various workloads.
EASE M2 NVMe PCIe SSD 256GB Desc Img 4
EASE M2 NVMe PCIe SSD 256GB Desc Img 5
ATTO Disk Benchmark
The attached ATTO Disk Benchmark results highlight the EASE M.2 NVMe PCIe 256 GB SSD’s impressive read and write speeds across different file sizes, demonstrating its excellent performance and versatility for a wide range of data transfer tasks.
EASE M2 NVMe PCIe SSD 256GB Desc Img 6
SKU: EM256 Categories: ,
Brand

Size 80.00 x 22.00 x 3.5mm Interface type M.2 2280
Weight ≤7g Flash particles 3D TLC
Controller SMI/YS(YEESTOR)/Realtek
Capacity 256GB
Operating Temperature DC 3.3V ±5%
Idle power consumption ≤0.7W
Operating power consumption ≤1.7W
Data saving It can be stored at 25 ℃ for more than 10 years
Mean time between failures 1 million
Error checking and correction Hardware BCH ECC capable of correcting errors up to 76bit/1KB
Flash management System automatic bad block management
Operating Temperature 0°C-70°C
Storage Temperature -40°C-85°C
Ambient humidity 5-95%
Max Shock Resistance 1500G
Feature 1.MEDS ensures valuable data is protected
2.SaticDaraRefresh Technology ensures data integrity
3.SLC cashung accelerates burst performance
4.Bulit-in LDPC ECC
5.Device Sleep mode(DEVSLP) supported
6.PCIE 3.0  interface(backwards compatible with 
7.Supports Security Erase
8.TRIM Support(OS/driver support required )
9.High-reliability 3D TLC NAND flash
10.S.M.A.R.T. support
11. User-upgradeable firmware
12. Temperature sensor
13. RoHS, FCC, CE
14. Power Consumption(Idle):0.08W
15. Power Consumption(Active):2W
16. Max sequential speeds measured using ATTO 2.46 at queue depth 10. Max IOPS measured using IOMeter 1.1 at queue depth 3.0
Product characteristics 1.Supports PIO mode 0, 1, 2, 3, and 4
2.Supports DMA modes 0, 1, and 2
3.Supports UDMA modes 0, 1, 2, 3, 4, 5, 6, and 7
4.Supports static and dynamic wear balancing algorithms
5.Supports for garbage collection
6.The space reservation mechanism is supported
7.Supports power management and intelligent management technologies
8.Supports full-speed command queuing
9.Supports for Trim directives
10.Supports for error checking and correction mechanisms